Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching
نویسندگان
چکیده
منابع مشابه
Demonstration and Modeling of Multi-Bit Resistance Random Access Memory
Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution...
متن کاملMulti-Tier Data Access & Hierarchical Memory Optimization
Building robust and reliable storage systems and memory hierarchies is very important in modern computing environment because hierarchical memory architecture is present almost everywhere. This hierarchy is not limited to attached devices, but it expands to middle-tiers, web caches, and network and internet storage. So optimizing access of the data stored along all these hierarchical levels is ...
متن کاملMemory Hierarchy Considerations for Fast Transpose and Bit-Reversals
This paper explores the interplay between algorithm design and a computer’s memory hierarchy. Matrix transpose and the bit-reversal reordering are important scientific subroutines which often exhibit severe performance degradation due to cache and TLB associativity problems. We give lower bounds that show for typical memory hierarchy designs, extra data movement is unavoidable. We also prescrib...
متن کاملSpin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory
We present experimental and numerical results of current-driven magnetization switching in magnetic tunnel junctions. The experiments show that, for MgObased magnetic tunnelling junctions, the tunnelling magnetoresistance ratio is as large as 155% and the intrinsic switching current density is as low as 1.1× 10 A cm. The thermal effect and current pulse width on spin-transfer magnetization swit...
متن کاملEmbedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory
Static random access memory (SRAM) is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage current that is caused by the quantum tunneling effect. Magnetic random access memory (MRAM) is a candidate technology to replace SRAM, assuming...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Access
سال: 2019
ISSN: 2169-3536
DOI: 10.1109/access.2019.2933902